| Publication details |
| Name: |
Redistribution of phosphorus in implanted laser-annealed silicon during subsequent heat treatment lasting up to tens of seconds |
| Journal: |
Sov. Phys. Semicond |
| Detail info: |
21(8), 891 – 892 |
| Year: |
1987 |
| Authors: |
V. E. Borisenko, A. G. Dutov, K. E. Lobanova, S. G. Yudin.
|
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